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2. Measurement Process Characterization
2.6. Case studies
2.6.2. Check standard for resistivity measurements

2.6.2.1.

Background and data

Explanation of check standard measurements The process involves the measurement of resistivity (ohm.cm) of individual silicon wafers cut from a single crystal (# 51939). The wafers were doped with phosphorous to give a nominal resistivity of 100 ohm.cm. A single wafer (#137), chosen at random from a batch of 130 wafers, was designated as the check standard for this process.
Design of data collection and Database The measurements were carried out according to an ASTM Test Method (F84) with NIST probe #2362. The measurements on the check standard duplicate certification measurements that were being made, during the same time period, on individual wafers from crystal #51939. For the check standard there were:
  • J = 6 repetitions at the center of the wafer on each day
  • K = 25 days

The K = 25 days cover the time during which the individual wafers were being certified at the National Institute of Standards and Technology.

Software The analyses used in this case study can be generated using both Dataplot code and R code. The reader can download the data as a text file.
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